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题名: Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region
作者: Liu, JP (刘建平) ; Li, ZC (Li, Zengcheng) ; Zhang, LQ (张立群) ; Zhang, F (张峰) ; Tian, AQ (田爱琴) ; Zhou, K (周坤) ; Li, DY (李德尧) ; Zhang, SM (张书明) ; Yang, H (杨辉)
通讯作者: Liu, JP (刘建平)
刊名: APPLIED PHYSICS EXPRESS
发表日期: 2014
卷: 7, 期:11
收录类别: SCI
英文摘要: Two-step growth was employed to grow GaN quantum barriers (QBs) in InGaN green LD structures. A cap layer was grown at the same temperature as an InGaN quantum well (QW), and the temperature was then raised by around 130 degrees C to grow GaN QBs. The effects of low-temperature- grown cap (LT-cap) layers on the optical properties and microstructures of green LD structures were investigated. It was found that the LT-cap layer with an optimal thickness can improve the luminescence homogeneity and suppress the thermal decomposition of InGaN QWs. C-plane ridge waveguide laser diodes lasing above 500 nm were realized. (C) 2014 The Japan Society of Applied Physics 
语种: 英语
WOS记录号: WOS:000346119500001
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/1845
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liu, JP ,Li, ZC ,Zhang, LQ ,et al. Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region[J]. APPLIED PHYSICS EXPRESS,2014,7(11).
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