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题名: Room-temperature GaAs/InP wafer bonding with extremely low resistance
作者: Uchida, S (Uchida, Shiro) ; Watanabe, T (Watanabe, Tomomasa) ; Yoshida, H (Yoshida, Hiroshi) ; Tange, T (Tange, Takashi) ; Arimochi, M (Arimochi, Masayuki) ; Ikeda, M (Ikeda, Masao) ; Dai, P (代盼) ; He, W (He, Wei) ; Ji, L (季莲) ; Lu, SL (陆书龙) ; Yang, H (杨辉)
通讯作者: Uchida, S (Uchida, Shiro)
关键词: CONCENTRATOR SOLAR-CELLS
刊名: APPLIED PHYSICS EXPRESS
发表日期: 2014
卷: 7, 期:11
收录类别: SCI
英文摘要: Low-temperature direct wafer bonding is a promising technique for fabricating multijunction solar cells with more than four junctions in order to obtain high conversion efficiencies. However, it has been difficult to reduce the bond interface resistance between a GaAs-based subcell wafer and an InP-based subcell wafer. We found that a novel bonding structure comprising heavily Zn-doped (1 x 10(19) cm(-3)) p(+)-GaAs and S-doped (3 x 10(18)cm(-3)) n-InP had an interface resistance of 2.5 x 10(-5) Omega.cm(2), which is the lowest value ever reported. This result suggests that the newly developed room-temperature wafer bonding technique has high potential to realize high-efficiency multijunction solar cells. (C) 2014 The Japan Society of Applied Physics 
语种: 英语
WOS记录号: WOS:000346119500020
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/1846
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Uchida, S ,Watanabe, T ,Yoshida, H ,et al. Room-temperature GaAs/InP wafer bonding with extremely low resistance[J]. APPLIED PHYSICS EXPRESS,2014,7(11).
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