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题名: Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots
作者: Zhao, WR (Zhao Wan-Ru) ; Weng, GE (Weng Guo-En) ; Liang, MM (Liang Ming-Ming) ; Li, ZC (李增成) ; Liu, JP (刘建平) ; Zhang, JY (Zhang Jiang-Yong) ; Zhang, BP (Zhang Bao-Ping)
通讯作者: Zhang, BP (Zhang Bao-Ping)
关键词: LOCALIZATION ; STRAIN ; LEDS
刊名: CHINESE PHYSICS LETTERS
发表日期: 2014
卷: 31, 期:11
收录类别: SCI
英文摘要:
Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) 
 
grown on sapphire substrates by using metal organic chemical vapor deposition are 
 
studied by temperature-dependent photoluminescence (PL) measurements. As temperature 
 
increases (15-300 K), the PL peak energy shows an anomalous V-shaped (redshift-
 
blueshift) variation instead of an S-shaped (redshift-blueshift-redshift) variation, 
 
as observed typically in green-emitting InGaN/GaN multi-quantum wells (MQWs). The PL 
 
full width at half maximum (FWHM) also shows a V-shaped (decrease-increase) 
 
variation. The temperature dependence of the PL peak energy and FWHM of QDs are well 
 
explained by a model similar to MQWs, in which carriers transferring in localized 
 
states play an important role, while the confinement energy of localized states in 
 
the QDs is significantly larger than that in MQWs. By analyzing the integrated PL 
 
intensity, the larger confinement energy of localized states in the QDs is estimated 
 
to be 105.9 meV, which is well explained by taking into account the band-gap 
 
shrinkage and carrier thermalization with temperature. It is also found that the 
 
nonradiative combination centers in QD samples are much less than those in QW 
 
samples with the same In content.
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/1852
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Zhao, WR ,Weng, GE ,Liang, MM ,et al. Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots[J]. CHINESE PHYSICS LETTERS,2014,31(11).
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