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题名: Contactless probing of the intrinsic carrier transport in single-walled carbon nanotubes
作者: Li, YS (Li, Yize Stephanie) ; Ge, J (葛军) ; Cai, JH (蔡金华) ; Zhang, J (张杰) ; Lu, W (卢威) ; Liu, J (Liu, Jia) ; Chen, LW (陈立桅)
通讯作者: Chen, LW (陈立桅)
关键词: single-walled carbon nanotubes ; electronic transport ; dielectric force microscopy ; field-effect transistor ; carrier density ; carrier mobility
刊名: NANO RESEARCH
发表日期: 2014
卷: 7, 期:11, 页:1623-1630
收录类别: SCI
英文摘要:
Intrinsic carrier transport properties of single-walled carbon nanotubes have 
 
been probed by two parallel methods on the same individual tubes: The contactless 
 
dielectric force microscopy (DFM) technique and the conventional field-effect 
 
transistor (FET) method. The dielectric responses of SWNTs are strongly correlated 
 
with electronic transport of the corresponding FETs. The DC bias voltage in DFM 
 
plays a role analogous to the gate voltage in FET. A microscopic model based on the 
 
general continuity equation and numerical simulation is built to reveal the link 
 
between intrinsic properties such as carrier concentration and mobility and the 
 
macroscopic observable, i.e. dielectric responses, in DFM experiments. Local 
 
transport barriers in nanotubes, which influence the device transport behaviors, are 
 
also detected with nanometer scale resolution. 
语种: 英语
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/1854
Appears in Collections:纳米研究国际实验室_陈立桅团队_期刊论文

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Recommended Citation:
Li, YS ,Ge, J ,Cai, JH ,et al. Contactless probing of the intrinsic carrier transport in single-walled carbon nanotubes[J]. NANO RESEARCH,2014,7(11):1623-1630.
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