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题名: Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation
作者: Zhang, ZL(张志利); Fu, K(付凯); Deng, XG(邓旭光); Zhang, XD(张晓东); Fan, YM(范亚明); Sun, SC(孙世闯); Song, L(宋亮); Xing, Z(邢政); Huang, W(黄伟); Yu, GH(于国浩); Cai, Y(蔡勇); Zhang, BS(张宝顺)
通讯作者: Zhang, ZL (张志利)
关键词: AlGaN/GaN high electron mobility transistor (HEMT) ; standard fluorine ion implantation ; normally off
刊名: IEEE ELECTRON DEVICE LETTERS
发表日期: 2015
DOI: 10.1109/LED.2015.2483760
卷: 36, 期:11, 页:4
收录类别: SCI
部门归属: 纳米加工公共平台
英文摘要: This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using 10 keV fluorine ion implantation. An 8 nm low-pressure chemical vapor deposition silicon nitride layer was deposited on the AlGaN as gate dielectric and energy-absorbing layer that slows down the high energy (10 keV) fluorine ions to reduce the implantation damage. The E-mode MIS-HEMTs exhibit a threshold voltage as high as +3.3 V with a maximum drain current over 200 mA/mm (250 mA/mm for depletion-mode MIS-HEMTs) and a high on/off current ratio of 10(9). Meanwhile, the E-mode MIS-HEMT dynamic R-ON is only 1.53 times larger than the static R-ON after off-state V-DS stress of 500 V.
语种: 英语
JCR小类分区: 二区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3280
Appears in Collections:纳米加工公共平台_期刊论文

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Normally Off AlGaN_GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation.pdf(983KB)期刊论文作者接受稿限制开放View 联系获取全文

Recommended Citation:
Zhang, ZL,Fu, K,Deng, XG,et al. Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation[J]. IEEE ELECTRON DEVICE LETTERS,2015,36(11):4.
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文件名: Normally Off AlGaN_GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation.pdf
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