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题名: Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates
作者: Li, KL(李奎龙); Sun, YR(孙玉润); Dong, JR(董建荣); He, Y(何洋); Zeng, XL(曾徐路); Zhao, YM(赵勇明); Yu, SZ(于淑珍); Zhao, CY(赵春雨)
通讯作者: Li, KL
关键词: Metamorphic GaInP buffers ; Threading dislocations ; X-ray diffraction ; Strain relaxation ; Dislocation annihilation
刊名: THIN SOLID FILMS
发表日期: 2015
DOI: 10.1016/j.tsf.2015.08.039
卷: 593, 页:5
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 x 10(6) cm(-2) and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga-1 (-) xInxP (x = 0.48-0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. (C) 2015 Elsevier B.V. All rights reserved.
语种: 英语
JCR小类分区: 三区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3285
Appears in Collections:纳米器件及相关材料研究部_董建荣团队_期刊论文

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Recommended Citation:
Li, KL,Sun, YR,Dong, JR,et al. Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates[J]. THIN SOLID FILMS,2015,593:5.
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