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题名: Identification of degradation mechanisms of blue InGaN/GaN laser diodes
作者: Wen, PY(温鹏雁); Zhang, SM(张书明); Li, DY(李德尧); Liu, JP(刘建平); Zhang, LQ(张立群); Zhou, K(周堃); Feng, MX(冯美鑫); Tian, AQ(田爱琴) Zhang, F(张峰); Gao, XD(高晓冬); Zeng, C(曾畅); Yang, H(杨辉)
通讯作者: Wen, PY (温鹏雁)
关键词: InGaN/GaN laser diode ; degradation mechanism ; optical characteristic
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
发表日期: 2015
DOI: 10.1088/0022-3727/48/41/415101
卷: 48, 期:41, 页:4
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: A comprehensive analysis of the degradation mechanism of blue InGaN/GaN laser diodes (LDs) is carried out by investigating the electrical and optical characteristics. The increase in the leakage current as well as decrease in the slope efficiency is observed. The luminescence properties of the active region at different aging stages are studied by means of cathodoluminescence. Significant degradation of the active region is observed on the room temperature cathodoluminescence while the low temperature cathodoluminescence shows almost no degradation, indicating that the degradation of the LDs is due to generation of low temperature frozen point defects. Furthermore, the generation of the defects follows a kinetic mechanism enhanced by electron-hole non-radiative recombination which explains the acceleration of time degradation in our LDs.
语种: 英语
JCR小类分区: 二区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3290
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Wen, PY,Zhang, SM,Li, DY,et al. Identification of degradation mechanisms of blue InGaN/GaN laser diodes[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2015,48(41):4.
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