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题名: Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor
作者: Zhang, XY(张晓渝); Tan, RB(谭仁兵); Sun, JD(孙建东); Li, XX(李欣幸); Zhou, Y(周宇); Lu, L(吕利); Qin, H(秦华)
通讯作者: Zhang, XY (张哓渝)
关键词: radio-frequency circuit ; high electron mobility transistor
刊名: CHINESE PHYSICS B
发表日期: 2015
DOI: 10.1088/1674-1056/24/10/105201
卷: 24, 期:10, 页:4
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V-g, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector.
语种: 英语
JCR小类分区: 四区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3298
Appears in Collections:纳米器件及相关材料研究部_秦华团队_期刊论文

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Recommended Citation:
Zhang, XY,Tan, RB,Sun, JD,et al. Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor[J]. CHINESE PHYSICS B,2015,24(10):4.
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