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题名: Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
作者: Hua, MY; Liu, C; Yang, S; Liu, SH; Fu, K; Dong, ZH; Cai, Y(蔡勇); Zhang, BS(张宝顺); Chen, KJ
通讯作者: Hua, MY
关键词: Gallium nitride ; gate dielectric ; low-pressure chemical vapor deposition (LPCVD) ; silicon nitride
刊名: IEEE TRANSACTIONS ON ELECTRON DEVICES
发表日期: 2015
DOI: 10.1109/TED.2015.2469716
卷: 62, 期:10, 页:8
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: In this paper, we systematically investigated the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures. The LPCVD-SiNx gate dielectric exhibits low leakage and high breakdown electric field. The dominant mechanism of the leakage current through LPCVD-SiNx gate dielectric is identified to be Poole-Frenkel emission at low electric field and Fowler-Nordheim tunneling at high electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown of the LPCVD-SiNx gate dielectric were also investigated.
语种: 英语
JCR小类分区: 二区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3302
Appears in Collections:纳米器件及相关材料研究部_张宝顺团队_期刊论文

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Recommended Citation:
Hua, MY,Liu, C,Yang, S,et al. Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015,62(10):8.
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