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题名: Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure
作者: He, XG; Zhao, DG; Jiang, DS; Zhu, JJ; Chen, P; Liu, ZS; Le, LC; Yang, J; Li, XJ; Zhang, SM(张书明); Yang, H(杨辉)
通讯作者: Zhao, DG
关键词: high electron mobility transistor ; two-dimensional electron gas ; GaN
刊名: CHINESE PHYSICS B
发表日期: 2015
DOI: 10.1088/1674-1056/24/9/096802
卷: 24, 期:9, 页:4
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas (2DEG) performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the high-temperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 x 10(13) cm(-2), electron mobility of 2101 cm(2).V-1.s(-1), and square resistance of 249 Omega is obtained.
语种: 英语
JCR小类分区: 四区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3316
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Recommended Citation:
He, XG,Zhao, DG,Jiang, DS,et al. Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure[J]. CHINESE PHYSICS B,2015,24(9):4.
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文件名: Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN_AlN_GaN structure.pdf
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