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题名: Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
作者: Li,XJ; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Yang, J; He, XG; Zhang, LQ(张立群); Liu, JP(刘建平); Zhang, SM(张书明); Yang, H(杨辉)
通讯作者: Zhao, DG
关键词: ohmic contact ; p-type GaN ; transportation mechanism ; deep-level-defect band
刊名: CHINESE PHYSICS B
发表日期: 2015
DOI: 10.1088/1674-1056/24/9/096804
卷: 24, 期:9, 页:5
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p(++)-GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I-V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p(++)-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p(++)-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97 x 10(-4) Omega.cm(2) is achieved.
语种: 英语
JCR小类分区: 四区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3317
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Li,XJ,Zhao, DG,Jiang, DS,et al. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN[J]. CHINESE PHYSICS B,2015,24(9):5.
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文件名: Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni_Au contact to p-GaN.pdf
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