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题名: Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells
作者: Liu, W; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Shi, M; Zhao, DM; Li, X; Liu, JP(刘建平); Zhang, SM(张书明); Wang, H(王辉); Yang, H(杨辉); Zhang, YT; Du, GT
通讯作者: Zhao, DG
刊名: OPTICS EXPRESS
发表日期: 2015
DOI: 10.1364/OE.23.015935
卷: 23, 期:12, 页:9
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: Three green light emitting InGaN/GaN multiple quantum well (MQW) structures with different In composition grown by metal-organic chemical vapor deposition are investigated by the X-ray diffraction and the temperature-dependent photoluminescence (PL) measurements. It is found that when the In composition increases in the InGaN/GaN MQWs, the PL spectral bandwidth may anomalously decrease with increasing temperature. The reduction of PL spectral bandwidth may be ascribed to the enhanced non-radiative recombination process which may lower the light emission efficiency of the localized luminescent centers with shallow localization energy in the high-In-content InGaN quantum wells and also cause a reduction of integrated PL intensity. (C) 2015 Optical Society of America
语种: 英语
JCR小类分区: 二区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3353
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liu, W,Zhao, DG,Jiang, DS,et al. Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells[J]. OPTICS EXPRESS,2015,23(12):9.
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