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题名: Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy
作者: Fang, B(方彬); Zhang, X; Zhang, S(); Zeng, ZM(曾中明); Cai, JW
通讯作者: Zeng, ZM (曾中明)
刊名: AIP ADVANCES
发表日期: 2015
DOI: 10.1063/1.4922297
卷: 5, 期:6, 页:6
收录类别: SCI
部门归属: 纳米加工公共平台
英文摘要: We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices. (C) 2015 Author(s).
语种: 英语
JCR小类分区: 三区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3359
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Fang, B,Zhang, X,Zhang, S,et al. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy[J]. AIP ADVANCES,2015,5(6):6.
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