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题名: Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement
作者: Harasawa, R; Yamamoto, N; Wu, H(吴昊); Aritake, T; Lu, SL(陆书龙); Ji, L(季莲); Tackeuchi, A
通讯作者: Tackeuchi, A
关键词: InGaAsP ; semiconductors ; spin relaxation ; spintronics
刊名: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
发表日期: 2015
DOI: 10.1002/pssb.201400321
卷: 252, 期:6, 页:4
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300K. We have observed the electron spin relaxation times of 980ps at 10K and 95ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30K. At 100-300K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
语种: 英语
JCR小类分区: 三区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3368
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Harasawa, R,Yamamoto, N,Wu, H,et al. Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2015,252(6):4.
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文件名: Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement.pdf
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