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题名: Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage
作者: Shi, M; Chen, P; Zhao, DG; Jiang, DS; Zheng, J; Cheng, BW; Zhu, JJ; Liu, ZS; Liu, W; Li, X; Zhao, DM; Wang, QM; Liu, JP(刘建平); Zhang, SM(张书明); Yang, H(杨辉)
通讯作者: Zhao, DG
关键词: AlN ; field emission ; cold cathode ; negative electron affinity
刊名: CHINESE PHYSICS B
发表日期: 2015
DOI: 10.1088/1674-1056/24/5/057901
卷: 24, 期:5, 页:5
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride (AlN) thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC (0001) substrate at 1100 degrees C by metal organic chemical vapor deposition (MOCVD) under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/mu m and the maximum emission current density is 154 mA/cm(2) at 69.3 V for the Si-doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.
语种: 英语
JCR小类分区: 四区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3378
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Shi, M,Chen, P,Zhao, DG,et al. Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage[J]. CHINESE PHYSICS B,2015,24(5):5.
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