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题名: Electrical performance of multilayer MoS2 transistors on high-kappa Al2O3 coated Si substrates
作者: Li, T(李涛); Wan, BS; Du, G(杜刚); Zhang, BS(张宝顺); Zeng, ZM(曾中明)
通讯作者: Zeng, ZM (曾中明)
刊名: AIP ADVANCES
发表日期: 2015
DOI: 10.1063/1.4919800
卷: 5, 期:5, 页:7
收录类别: SCI
部门归属: 纳米加工公共平台
英文摘要: The electrical performance of MoS2 can be engineered by introducing high-kappa dielectrics, while the interactions between high-kappa dielectrics and MoS2 need to be studied. In this study, multilayer MoS2 field-effect transistors (FETs) with a back-gated configuration were fabricated on high-kappa Al2O3 coated Si substrates. Compared with MoS2 FETs on SiO2, the field-effect mobility (mu(FE)) and subthreshold swing (SS) were remarkably improved in MoS2/Al2O3/Si. The improved mu(FE) was thought to result from the dielectric screening effect from high-kappa Al2O3. When a HfO2 passivation layerwas introduced on the top of MoS2/Al2O3/Si, the field-effect mobility was further enhanced, which was thought to be concerned with the decreased contact resistance between the metal and MoS2. Meanwhile, the interface trap density increased from 2.4x10(12) eV(-1) cm(-2) to 6.3 x 10(12) eV(-1) cm(-2). The increase of the off-state current and the negative shift of the threshold voltage may be related to the increase of interface traps. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
语种: 英语
JCR小类分区: 三区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3380
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Li, T,Wan, BS,Du, G,et al. Electrical performance of multilayer MoS2 transistors on high-kappa Al2O3 coated Si substrates[J]. AIP ADVANCES,2015,5(5):7.
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