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题名: III-V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique
作者: Arimochi, M; Watanabe, T; Yoshida, H; Tange, T; Nomachi, I; Ikeda, M; Dai, P(代盼); He, W(何巍); Ji, L(季莲); Lu, SL(陆书龙); Yang, H(杨辉); Uchida, S
通讯作者: Arimochi, M
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS
发表日期: 2015
DOI: 10.7567/JJAP.54.056601
卷: 54, 期:5, 页:4
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: We have developed III-V compound semiconductor multi-junction solar cells by a room-temperature wafer-bonding technique to avoid the formation of dislocations and voids due to lattice mismatch and thermal damage during a conventional high-temperature wafer-bonding process. First, we separately grew an (Al) GaAs top cell on a GaAs substrate and an InGaAs bottom cell on an InP substrate by metal solid source molecular beam epitaxy. Thereafter, we successfully bonded these sub-cells by the room-temperature wafer-bonding technique and fabricated (Al) GaAs parallel to InGaAs wafer-bonded solar cells. To the best of our knowledge, the obtained GaAs parallel to InGaAs and AlGaAs parallel to InGaAs wafer-bonded solar cells exhibited the lowest electrical and optical losses ever reported. The AlGaAs parallel to InGaAs solar cells reached the maximum efficiency of 27.7% at 120 suns. These results suggest that the room-temperature wafer-bonding technique has high potential for achieving higher conversion efficiencies. (C) 2015 The Japan Society of Applied Physics
语种: 英语
JCR小类分区: 四区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3382
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Arimochi, M,Watanabe, T,Yoshida, H,et al. III-V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2015,54(5):4.
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