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题名: GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy
作者: Lu, JY(卢建娅); Zheng, XH(郑新河); Wang, NM(王乃明); Chen, X(陈曦); Li, BJ(李宝吉); Lu, SL(陆书龙); Yang, H(杨辉)
通讯作者: Zheng, XH (郑新河)
刊名: CHINESE PHYSICS LETTERS
发表日期: 2015
DOI: 10.1088/0256-307X/32/5/057301
卷: 32, 期:5, 页:4
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: We demonstrate nearly 1 eV GaN0.03As0.97/In0.09Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a photoluminescence (PL) at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As superlattice solar cells show a reasonably-high short-circuit current density (J(sc)) of over 10 mA/cm(2). Furthermore, a concentration behavior is measured, which shows a linear relationship between J(sc) and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes.
语种: 英语
JCR小类分区: 四区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3384
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Lu, JY,Zheng, XH,Wang, NM,et al. GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy[J]. CHINESE PHYSICS LETTERS,2015,32(5):4.
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文件名: GaNAs_InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy.pdf
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