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题名: GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric
作者: Hua, MY; Liu, C; Yang, S; Liu, SH; Fu, K(付凯); Dong, ZH(董志华); Cai, Y(蔡勇); Zhang, BS(张宝顺); Chen, KJ
通讯作者: Hua, MY
关键词: Gallium nitride ; MIS-HEMT ; LPCVD ; silicon nitride ; gate dielectric
刊名: IEEE ELECTRON DEVICE LETTERS
发表日期: 2015
DOI: 10.1109/LED.2015.2409878
卷: 36, 期:5, 页:3
收录类别: SCI
部门归属: 纳米加工公共平台
英文摘要: In this letter, silicon nitride (SiNx) film deposited at 780 degrees C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiNx exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiNx, including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage.
语种: 英语
JCR小类分区: 二区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3386
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Hua, MY,Liu, C,Yang, S,et al. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric[J]. IEEE ELECTRON DEVICE LETTERS,2015,36(5):3.
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