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题名: Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy
作者: Zhou, K(周堃); Liu, JP(刘建平); Ikeda, M; Zhang, SM(张书明); Li, DY(李德尧); Zhang, LQ(张立群); Zeng, C(曾畅); Yang, H(杨辉)
通讯作者: Liu, JP (刘建平)
关键词: Surface structure ; Metalorganic vapor phase epitaxy ; Nitrides ; Semiconducting III-V materials
刊名: JOURNAL OF CRYSTAL GROWTH
发表日期: 2015
DOI: 10.1016/j.jcrysgro.2015.01.030
卷: 416, 页:7
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: Surface morphology of homoepitaxial GaN (0001) grown by metalorganic vapor phase epitaxy was studied. Selective growth was observed on the homoepitaxial GaN layer grown on as received GaN substrate and was attributed to the existence of substrate surface defects. The steps were pinned by defects and meandered. Due to the pinning effect, the step pattern developed to a wavy surface with a strip-like feature along the [11 ($) over bar0] direction during the subsequent growth of a thick n-GaN layer. Because of the surface undulations, the emission of InGaN/GaN multiple quantum wells grown on the n-GaN layer was inhomogeneous. The surface defects on GaN substrate could be removed by dry etching and the homoepitaxial layer on the etched substrate showed a smooth morphology and straight atomic steps. As a result, the emission of the InGaN/GaN MQWs became homogeneous. (C) 2015 Elsevier B.V. All rights reserved.
语种: 英语
JCR小类分区: 三区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3389
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Zhou, K,Liu, JP,Ikeda, M,et al. Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2015,416:7.
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