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题名: Room-temperature terahertz detection based on CVD graphene transistor
作者: Yang, XX(杨昕昕); Sun, JD(孙建东); Qin, H(秦华); Lv, L(吕利); Su, LN(苏丽娜); Yan, B(闫博); Li, XX(李欣幸); Zhang, ZP(张志鹏); Fang, JY(方靖岳)
通讯作者: Qin, H (秦华)
关键词: graphene ; field effect transistor ; self-mixing ; terahertz detection
刊名: CHINESE PHYSICS B
发表日期: 2015
DOI: 10.1088/1674-1056/24/4/047206
卷: 24, 期:4, 页:5
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz(1/2). Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.
语种: 英语
JCR小类分区: 四区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3394
Appears in Collections:纳米器件及相关材料研究部_秦华团队_期刊论文

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Recommended Citation:
Yang, XX,Sun, JD,Qin, H,et al. Room-temperature terahertz detection based on CVD graphene transistor[J]. CHINESE PHYSICS B,2015,24(4):5.
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