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题名: Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator
作者: Su, LN(苏丽娜); Lv, L(吕利); Li, XX(李欣幸); Qin, H(秦华); Gu, XF
通讯作者: Gu, XF
刊名: CHINESE PHYSICS LETTERS
发表日期: 2015
DOI: 10.1088/0256-307X/32/4/047301
卷: 32, 期:4, 页:3
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano-lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50 nm in diameter is demonstrated to operate at temperatures up to 70 K. The charging energy of the Coulomb island is about 12.5 meV.
语种: 英语
JCR小类分区: 四区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3397
Appears in Collections:纳米器件及相关材料研究部_秦华团队_期刊论文

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Recommended Citation:
Su, LN,Lv, L,Li, XX,et al. Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator[J]. CHINESE PHYSICS LETTERS,2015,32(4):3.
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文件名: Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator.pdf
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