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题名: A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current
作者: Li, X; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Shi, M; Zhao, DM; Liu, W; Zhu, JJ; Zhang, SM(张书明); Yang, H(杨辉)
通讯作者: Zhao, DG
关键词: GaAs laser diodes ; Threshold current ; Divergence angle
刊名: SUPERLATTICES AND MICROSTRUCTURES
发表日期: 2015
DOI: 10.1016/j.spmi.2015.01.006
卷: 80, 页:7
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: The vertical divergence angle of GaAs-based laser diodes (LD) can be reduced by usually increasing waveguide thickness and inserting low index layers between waveguide layers and cladding layers, but it will also induce an increase of the threshold current. It is proposed to make the inserted low index interlayers doped and asymmetric to simultaneously reduce vertical divergence angle and alleviate the deterioration of threshold current. The simulation results indicate that the carrier leakage and injection are improved due to the change of energy band profile. The characteristics of newly designed laser structure indicate a satisfactory light beam quality and a relatively low threshold current density. (C) 2015 Elsevier Ltd. All rights reserved.
语种: 英语
JCR小类分区: 三区
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3400
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Li, X,Zhao, DG,Jiang, DS,et al. A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current[J]. SUPERLATTICES AND MICROSTRUCTURES,2015,80:7.
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文件名: A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current.pdf
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