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题名: Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness
作者: Liu, W; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Shi, M; Zhao, DM; Li, X; Liu, JP(刘建平); Zhang, SM(张书明); Wang, H(王辉); Yang, H(杨辉)
通讯作者: Zhao, DG
关键词: Nitride materials ; Crystal growth ; Photoluminescence ; Multiple quantum wells ; Localization states ; Green light
刊名: JOURNAL OF ALLOYS AND COMPOUNDS
发表日期: 2015
DOI: 10.1016/j.jallcom.2014.11.138
卷: 625, 页:5
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: Green light emitting InGaN/GaN multiple-quantum-well (MQW) structures with varying well thickness are grown via metal-organic chemical vapor deposition (MOCVD). The localization effect in these samples is studied by means of temperature-dependent photoluminescence (PL) measurements. The S-shape shift of PL peak energy with increasing temperature is observed, from which the extent of localization effect is determined quantitatively by using a band-tail model. It is found that the composition-related deep localization states dominate the light emission in thin-well MQWs, while in thick-well MQWs the shallow localization states induced by the fluctuations of InGaN well thickness dominate the luminescence efficiency. It is considered that in the thinner wells the improved emitting efficiency may partially originate from the stronger localization effect. (C) 2014 Elsevier B. V. All rights reserved.
语种: 英语
JCR小类分区: 二区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3412
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liu, W,Zhao, DG,Jiang, DS,et al. Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2015,625:5.
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文件名: Localization effect in green light emitting InGaN_GaN multiple quantum wells with varying well thickness.pdf
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