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题名: Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy
作者: Dai, P(代盼); Tan, M(谭明); Wu, YY(吴渊源); Ji, L(季莲); Bian, LF(边历峰); Lu, SL(陆书龙); Yang, H(杨辉)
通讯作者: Lu, SL (陆书龙)
关键词: Doping ; Molecular beam epitaxy ; Solar cell
刊名: JOURNAL OF CRYSTAL GROWTH
发表日期: 2015
DOI: 10.1016/j.jcrysgro.2014.12.014
卷: 413, 页:5
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: Solid-state tellurium (Te) is used as an n-type dopant of AllnP grown by molecular beam epitaxy (MBE). The carrier concentration proportionally increases with increasing Te beam equivalent pressure (BEP) up to a high doping density of 1 x 10(19) cm(-3). The incorporation of Te into AllnP results in a mirror-like surface at a moderate doping density due to its surfactant effect, while the surface roughness increased with a further rising of Te doping concentration. Furthermore, for the same In and Al flux ratio, the increase of the Te flux leads to a decreased In-content, but little effect on the alloy's disorder is observed. The highly Tv-doped AllnP was used in a GaAs solar cell as a window layer. As compared with the solar cell with the Si-doped AllnP window layer, the device with the Te-doped AllnP window layer exhibits the higher efficiency and an extended increase under concentrated solar illumination, due to the benefits of the higher doping density in the Te-doped epilayer. (C) 2014 Elsevier B.V. All rights reserved
语种: 英语
JCR小类分区: 三区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3422
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Dai, P,Tan, M,Wu, YY,et al. Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2015,413:5.
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文件名: Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy.pdf
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