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题名: Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
作者: Yang, J; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Li, XJ; He, XG; Liu, JP(刘建平); Yang, H(杨辉); Zhang, YT; Du, GT
通讯作者: Zhao, DG
刊名: JOURNAL OF APPLIED PHYSICS
发表日期: 2015
DOI: 10.1063/1.4907670
卷: 117, 期:5, 页:6
收录类别: SCI
部门归属: 纳米器件及相关材料研究部
英文摘要: The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, and therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs. (C) 2015 AIP Publishing LLC.
语种: 英语
JCR小类分区: 三区
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内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/3433
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Yang, J,Zhao, DG,Jiang, DS,et al. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness[J]. JOURNAL OF APPLIED PHYSICS,2015,117(5):6.
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