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题名: Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid
作者: Zhang, ZL(张志利); Qin, SJ(秦双娇); Fu, K(付凯); Yu, GH(于国浩); Li, WY; Zhang, XD(张晓东); Sun, SC(孙世闯); Song, L(宋亮); Li, SM(李水明); Hao, RH(郝荣晖); Fan, YM(范亚明); Sun, Q(孙钱); Pan, GB(潘革波); Cai, Y(蔡勇); Zhang, BS(张宝顺)
通讯作者: Cai, Y(蔡勇) ; Zhang, BS(张宝顺)
刊名: APPLIED PHYSICS EXPRESS
发表日期: 2016
DOI: 10.7567/APEX.9.084102
卷: 9, 期:8
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
英文摘要: We characterized an ionic liquid (1-butyl-3-methylimidazolium nitrate, C8H15N3O3) as a photo-electrochemical etchant for fabricating normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Using the ionic liquid, we achieved an etching rate of similar to 2.9 nm/min, which is sufficiently low to facilitate good etching control. The normally-off AlGaN/GaN MIS-HEMT was fabricated with an etching time of 6 min, with the 20 nm low-pressure chemical vapor deposition (LPCVD) silicon nitride (Si3N4) gate dielectric exhibiting a threshold voltage shift from -10 to 1.2 V, a maximum drain current of more than 426 mA/mm, and a breakdown voltage of 582V. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]: SEPARATION ; GAN
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000383983200022
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4548
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Zhang, ZL,Qin, SJ,Fu, K,et al. Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid[J]. APPLIED PHYSICS EXPRESS,2016,9(8).
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