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题名: Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant
作者: Zhang, MR(张淼荣); Qin, SJ(秦双娇); Peng, HD(彭红丹); Pan, GB(潘革波)
通讯作者: Pan, GB(潘革波)
刊名: MATERIALS LETTERS
发表日期: 2016
DOI: 10.1016/j.matlet.2016.07.024
卷: 182
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 学科交叉综合研究部
英文摘要: Here we report an environment-friendly approach to fabricate porous GaN photoelectrode using ionic liquid as the etchant. SEM images revealed photo-assisted electrochemical etching (PECE) has better etching effect than electrochemical etching (ECE). Furthermore, Raman spectra demonstrated porous GaN obtained by PECE has better lattice integrity than that obtained by ECE. The photocurrent of porous GaN prepared by PECE is six times and two times of planar and porous GaN fabricated by ECE, respectively. Above results indicated porous GaN obtained by PECE can be a promising photoelectrode for optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]: GALLIUM NITRIDE ; ELECTRODEPOSITION ; ARRAYS
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000382338400089
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4558
Appears in Collections:学科交叉综合研究部_潘革波团队_期刊论文

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Recommended Citation:
Zhang, MR,Qin, SJ,Peng, HD,et al. Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant[J]. MATERIALS LETTERS,2016,182.
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