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题名: Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles
作者: Zhang, D(张栋); Kong, T(孔涛); Wang, M(王淼); Xiao, M(肖淼); Zhang, ZC(张战成); Cheng, GS(程国胜)
通讯作者: Cheng, GS(程国胜)
刊名: APPLIED PHYSICS LETTERS
发表日期: 2016
DOI: 10.1063/1.4962535
卷: 109, 期:10
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米生物医学与安全研究部
英文摘要: Photocurrent transient variation caused by hot-electron transfer was detected in gold nanoparticles embedded in silicon nanowire field-effect transistors via their electrical response under illumination. The devices showed dramatic photocurrent transient variation at various illumination wavelengths (300, 500, 700, and 900 nm). The maximum transient variation of the source-drain current was about five-fold stronger with the gold nanoparticles than without. A finite-difference time-domain method was employed to determine the response wavelength range of the photocurrent transient variation. The distribution of the local electromagnetic field at the interface of the gold nanoparticles and the silicon nanowire was calculated. The weak hot-electron transfer for incident wavelengths below 500 nm was concentrated on the three-phase boundary of air, gold, and silicon, while there was a relatively strong hot-electron transfer present at the boundary of gold and silicon in the wavelength range from 700 to 900 nm. Published by AIP Publishing.
关键词[WOS]: INDUCED ELECTRON-TRANSFER ; GOLD NANOPARTICLES ; SOLAR-CELLS ; SILICON ; TIO2 ; FILMS
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000384402900048
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4566
Appears in Collections:纳米生物医学与安全研究部_程国胜团队_期刊论文

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Recommended Citation:
Zhang, D,Kong, T,Wang, M,et al. Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles[J]. APPLIED PHYSICS LETTERS,2016,109(10).
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