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题名: Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation
作者: Yu, SZ(于淑珍); Dong, JR(董建荣); Sun, YR(孙玉润); Li, KL(李奎龙); Zeng, XL(曾徐路); Zhao, YM(赵勇明); Yang, H(杨辉)
通讯作者: Dong, JR(董建荣)
刊名: CHINESE PHYSICS B
发表日期: 2016
DOI: 10.1088/1674-1056/25/3/038101
卷: 25, 期:3
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Asymmetry in dislocation density and strain relaxation has a significant impact on device performance since it leads to anisotropic electron transport in metamorphic materials. So it is preferred to obtain metamorphic materials with symmetric properties. In this paper, we grew metamorphic In0.27Ga0.73As epilayers with symmetric low threading dislocation density and symmetric strain relaxation in two. 110. directions using InAlGaAs buffer layers on 7 degrees misoriented GaAs (001) substrates. To understand the control mechanism of symmetric properties of In0.27Ga0.73As layers by the substrate miscut angles, In0.27Ga0.73As grown on 2 degrees and 15 degrees misoriented substrates were also characterized as reference by atomic force microscopy, transmission electron microscopy, and high resolution triple axis x-ray diffraction. The phase separation and interaction of 60 degrees misfit dislocations were found to be the reasons for asymmetry properties of In0.27Ga0.73As grown on 2 degrees and 15 degrees substrates, respectively. Photoluminescence results proved that the In0.27Ga0.73As with symmetric properties has better optical properties than the In0.27Ga0.73As with asymmetric properties at room temperature. These results imply that high quality metamorphic In0.27Ga0.73As can be achieved with controllable isotropic electron transport property.
关键词[WOS]: STRAIN RELAXATION ; GAAS ; DISLOCATIONS ; FILMS ; NUCLEATION
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000375647400065
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4574
Appears in Collections:纳米器件及相关材料研究部_董建荣团队_期刊论文

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Recommended Citation:
Yu, SZ,Dong, JR,Sun, YR,et al. Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation[J]. CHINESE PHYSICS B,2016,25(3).
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