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题名: Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells
作者: Yang, WX(杨文献); Dai, P(代盼); Ji, L(季莲); Tan, M; Wu, YY(吴渊渊); Uchida, S; Lu, SL(陆书龙); Yang, H(杨辉)
通讯作者: Lu, SL(陆书龙)
刊名: APPLIED SURFACE SCIENCE
发表日期: 2016
DOI: 10.1016/j.apsusc.2016.07.163
卷: 389
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: We report on the fabrication of III-V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]: MOLECULAR-BEAM-EPITAXY ; EFFICIENCY ; DEVICES ; DEPENDENCE ; DIFFUSION ; SPACE ; GAAS ; INP
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000384577600082
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4587
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Yang, WX,Dai, P,Ji, L,et al. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells[J]. APPLIED SURFACE SCIENCE,2016,389.
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