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题名: Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study
作者: Yang, JH; Shi, L(石林); Wang, LW; Wei, SH
通讯作者: Wei, SH
刊名: SCIENTIFIC REPORTS
发表日期: 2016
DOI: 10.1038/srep21712
卷: 6
收录类别: SCI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: Non-radiative recombination plays an important role in the performance of optoelectronic semiconductor devices such as solar cells and light-emitting diodes. Most textbook examples assume that the recombination process occurs through a single defect level, where one electron and one hole are captured and recombined. Based on this simple picture, conventional wisdom is that only defect levels near the center of the bandgap can be effective recombination centers. Here, we present a new two-level recombination mechanism: first, one type of carrier is captured through a defect level forming a metastable state; then the local defect configuration rapidly changes to a stable state, where the other type of carrier is captured and recombined through another defect level. This novel mechanism is applied to the recombination center Te-cd(2+) in CdTe. We show that this two-level process can significantly increase the recombination rate (by three orders of magnitude) in agreement with experiments. We expect that this two-level recombination process can exist in a wide range of semiconductors, so its effect should be carefully examined in characterizing optoelectronic materials.
关键词[WOS]: TOTAL-ENERGY CALCULATIONS ; WAVE BASIS-SET ; MULTIPHONON TRANSITIONS ; COUPLING SCHEME ; SEMICONDUCTORS
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000370231900001
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4594
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Yang, JH,Shi, L,Wang, LW,et al. Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study[J]. SCIENTIFIC REPORTS,2016,6.
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文件名: Non-Radiative Carrier Recombination Enhanced by Two-Level Process_ A First-Principles Study.pdf
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