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题名: Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs
作者: Yang, J; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Liu, JP(刘建平); Zhang, LQ(张立群); Yang, H(杨辉); Zhang, YT; Du, GT
通讯作者: Zhao, DG
刊名: JOURNAL OF ALLOYS AND COMPOUNDS
发表日期: 2016
DOI: 10.1016/j.allcom.2016.04.259
卷: 681
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: A series of InGaN/GaN multi-quantum well (MQW) LEDs are grown by using metalorganic chemical vapor deposition (MOCVD) with similar structure but at different temperature, their structural and optical characteristics are investigated in detail. It is unexpectedly found that the output power of LEDs increases markedly when the growth temperature of InGaN QWs decreases from 820 degrees C to as low as 770 degrees C. This is attributed to the variation of localization states with the decrease of growth temperature. In the lower temperature (LT) grown InGaN/GaN MQWs, the formation of large and high indium content In-rich regions accompanied with defects is better suppressed, while the formation of shallower and more homogeneous localization states, behaving as effective luminescence centers, are more favored. Therefore, enhanced emission intensity is observed in the LT-grown InGaN/GaN MQW LEDs. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]: BARRIER GROWTH TEMPERATURE ; DEPENDENCE ; BAND ; WAVELENGTH ; EXCITONS ; INDIUM ; SHIFT ; GAP
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000376443300064
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4596
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Yang, J,Zhao, DG,Jiang, DS,et al. Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,681.
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文件名: Yang-2016-Emission efficiency enhanced by intr.pdf
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