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题名: Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes
作者: Yang, J; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Li, XJ; He, XG; Liu, JP(刘建平); Zhang, LQ(张立群); Yang, H(杨辉)
通讯作者: Zhao, DG
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
发表日期: 2016
DOI: 10.1116/1.4937265
卷: 34, 期:1
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Anomalous current-voltage behaviors, such as negative differential resistance (NDR) and current hysteresis, are observed in the room-temperature current-voltage (I-V) curves of InGaN/GaN multiple-quantum-well light-emitting diodes. It is found that the NDR can be observed in the positive voltage range of the I-V curve only when the samples are pretreated with a negative voltage before sweeping, and the NDR disappears permanently after an over-current treatment. The dependence of the NDR upon the negative voltage and sweeping conditions leads to the conclusion that a variation of the charging state of the defect-induced hole traps is responsible for the anomalous I-V behaviors. Therefore, NDR is excluded as a feature of the tunneling transport mechanism, especially in GaN-based devices with a high defect density. (C) 2015 American Vacuum Society.
关键词[WOS]: RESONANT-TUNNELING DIODES ; DOUBLE-BARRIER DIODES ; INSTABILITIES ; EMISSION
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000375799800007
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4597
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Yang, J,Zhao, DG,Jiang, DS,et al. Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2016,34(1).
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文件名: Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes.pdf
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