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题名: Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses
作者: Yang, J; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; He, XG; Li, XJ; Liu, JP(刘建平); Zhang, LQ(张立群); Yang, H(杨辉)
通讯作者: Zhao, DG
刊名: VACUUM
发表日期: 2016
DOI: 10.1016/j.vacuum.2016.04.016
卷: 129
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The performance and efficiency droop behaviors of InGaN/GaN multiple quantum well (MQW) green LEDs with various low temperature grown GaN cap (LT-cap) layer are investigated. It is found that the output power increases when a thin LT-cap layer (0.37 nm) is inserted and it decreases as the LT-cap layer thickness increases up to 1.5 nm. In addition, the apparent efficiency droop decreases when the thickness of LT-cap layer increases from 0 to 1.5 nm. However, the related physical mechanisms are different. When the relatively thin LT-cap layers are inserted, the carrier confinement effect of QWs enhances due to the increased In content of InGaN QWs. In this case, electrons are hardly to escape from MQW region to pGaN region, which results in a relatively high output power at high injection current, thus a small efficiency droop is obtained. However, when the LT-cap layer thickness is relatively thick, due to the large defect density of InGaN/GaN MQWs, although the small efficiency droop also can be observed, the relatively low output power is obtained at all injection currents. (C) 2016 Elsevier Ltd. All rights reserved.
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000377313500015
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4599
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Yang, J,Zhao, DG,Jiang, DS,et al. Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses[J]. VACUUM,2016,129.
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