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题名: Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films
作者: Yang, J; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Le, LC; Li, XJ; He, XG; Zhang, LQ(张立群); Yang, H(杨辉)
通讯作者: Zhao, DG
刊名: CHINESE PHYSICS B
发表日期: 2016
DOI: 10.1088/1674-1056/25/2/027102
卷: 25, 期:2
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Two series of p-GaN films grown at different temperatures are obtained by metal organic chemical vapor deposition (MOCVD). And the different variation behaviors of resistivity with growth condition for high-temperature(HT)-grown and low-temperature(LT)-grown p-GaN films are investigated. It is found that the resistivity of HT-grown p-GaN film is nearly unchanged when the NH3 flow rate or reactor pressure increases. However, it decreases largely for LT-grown p-GaN film. These different variations may be attributed to the fact that carbon impurities are easy to incorporate into p-GaN film when the growth temperature is low. It results in a relatively high carbon concentration in LT-grown p-GaN film compared with HT-grown one. Therefore, carbon concentration is more sensitive to the growth condition in these samples, ultimately, leading to the different variation behaviors of resistivity for HT-and LT-grown ones.
关键词[WOS]: CHEMICAL-VAPOR-DEPOSITION ; MG-DOPED GAN ; YELLOW LUMINESCENCE ; MOVPE GROWTH ; CARBON
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000370179100057
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4601
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Yang, J,Zhao, DG,Jiang, DS,et al. Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films[J]. CHINESE PHYSICS B,2016,25(2).
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