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题名: Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN
作者: Yang, Fann-Wei; Chen, Yu-Yu; Feng, Shih-Wei; Sun, Qian(孙钱); Han, Jung
通讯作者: Feng, SW
刊名: Nanoscale Research Letters
发表日期: 2016
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000391795800001
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4604
Appears in Collections:纳米器件及相关材料研究部_孙钱团队_期刊论文

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Recommended Citation:
Yang, Fann-Wei,Chen, Yu-Yu,Feng, Shih-Wei,et al. Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN[J]. Nanoscale Research Letters,2016.
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文件名: Yang-2016-Effects of Thickness of a Low-Temper.pdf
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