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题名: Te-Doped Black Phosphorus Field-Effect Transistors
作者: Yang, Bingchao; Wan, Bensong; Zhou, Qionghua; Wang, Yue; Hu, Wentao; Lv, Weiming; Chen, Qian; Zeng, Zhongming(曾中明); Wen, Fusheng; Xiang, Jianyong; Yuan, Shijun; Wang, Jinlan; Zhang, Baoshun(张宝顺); Wang, Wenhong; Zhang, Junying; Xu, Bo; Zhao, Zhisheng; Tian, Yongjun; Liu, Zhongyuan
通讯作者: Liu, ZY ; Zeng, ZM(曾中明) ; Wang, JL ; Wang, WH
刊名: Advanced Materials
发表日期: 2016
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
语种: 英语
JCR小类分区: 一区
WOS记录号: WOS:000391174600019
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4606
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Yang, Bingchao,Wan, Bensong,Zhou, Qionghua,et al. Te-Doped Black Phosphorus Field-Effect Transistors[J]. Advanced Materials,2016.
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文件名: Yang-2016-Te-Doped Black Phosphorus Field-Effe.pdf
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