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题名: Performance improvement for printed indium gallium zinc oxide thin-film transistors with a preheating process
作者: Xie, ML(谢美兰); Wu, SJ(吴绍静); Chen, Z(陈征); Khan, Q; Wu, XZ(吴馨洲); Shao, SS(邵霜霜); Cui, Z(崔铮)
通讯作者: Chen, Z(陈征) ; Cui, Z(崔铮)
刊名: RSC ADVANCES
发表日期: 2016
DOI: 10.1039/c6ra01776b
卷: 6, 期:47
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 印刷电子学部
英文摘要: High performance indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) were fabricated by printing and spin -coating IGZO inks as a semiconductor layer at low temperature annealing. A preheating strategy was developed, which significantly enhanced the performance of IGZO TFTs while the post-annealing temperature was kept constant at 300 degrees C. It was found that when the temperature of preheating on a hotplate increased from 40 degrees C to 275 degrees C, the field effect mobility improved from 0.31 cm(2) V-1 s(-1) to 4.93 cm(2) V-1 s(-1) for printed IGZO TFTs and from 1.44 cm(2) V-1 s(-1) to 7.9 cm(2) V-1 s(-1) for spin-coated IGZO TFTs. The surface roughness of the IGZO films significantly decreased by increasing the preheating temperature from 40 degrees C to 95 degrees C. In addition, the analysis of IGZO film composition revealed that an additional nitrate bidentate configuration appeared in the films with preheating at 275 degrees C, though the substitution of a N atom for O sub-lattice (N)0 was found in the film regardless of the preheating temperature. It was suggested that the performance enhancement was primarily attributed to the improvement in film texture brought about by the preheating strategy. Furthermore, the mobility enhancement at high preheating temperature was also related to the appearance of a bidentate configuration (M-O-2-N).
关键词[WOS]: GA-ZN-O ; LOW-TEMPERATURE FABRICATION ; SOL-GEL ; PHOTOCHEMICAL ACTIVATION ; ALUMINUM-OXIDE ; TRANSPARENT ; WATER ; MOBILITY ; SEMICONDUCTORS ; SPECTROSCOPY
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000375270600101
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4622
Appears in Collections:印刷电子学部_崔铮团队_期刊论文

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Recommended Citation:
Xie, ML,Wu, SJ,Chen, Z,et al. Performance improvement for printed indium gallium zinc oxide thin-film transistors with a preheating process[J]. RSC ADVANCES,2016,6(47).
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