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题名: Contact Resistance Effects in Carbon Nanotube Thin Film Transistors
作者: Xia, JY; Dong, GD; Tian, BY; Yan, QP; Han, J; Qiu, S(邱松); Li, QW(李清文); Liang, XL; Peng, LM
通讯作者: Liang, XL
刊名: ACTA PHYSICO-CHIMICA SINICA
发表日期: 2016
DOI: 10.3866/PKUMHXB201601292
卷: 32, 期:4
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 先进材料研究部
英文摘要: The contact resistance effect in the network type carbon nanotube thin film transistors (CNT-TFTs) is studied by using different contact metals. It is shown that palladium (Pd) can form an ohmic type contact with the carbon nanotube thin film, and gold (Au) forms an almost ohmic contact. On-state current and carrier mobility in the devices of these two contacts are high. In contrast, both titanium (Ti) and aluminum (Al) form Schottky type contacts with the carbon nanotube thin film. The barrier height and the contact resistance of the Al contact are higher than those of the Ti contact. Therefore, the on-state current and carrier mobility are relatively low in the corresponding devices of these two types of contacts. These results indicate that the performance of CNTTFTs can be tuned by the contact metal, which is important for the commercialization of CNT-TFTs.
关键词[WOS]: FIELD-EFFECT TRANSISTORS ; CIRCUITS ; MACROELECTRONICS ; PERFORMANCE ; ELECTRONICS ; FABRICATION ; DISPERSION ; SEPARATION
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000374712500026
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4626
Appears in Collections:先进材料研究部_李清文团队_期刊论文

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Recommended Citation:
Xia, JY,Dong, GD,Tian, BY,et al. Contact Resistance Effects in Carbon Nanotube Thin Film Transistors[J]. ACTA PHYSICO-CHIMICA SINICA,2016,32(4).
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