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题名: Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells
作者: Wu, YY; Ji, L(季莲); Dai, P(代盼); Tan, M(谭明); Lu, SL(陆书龙); Yang, H(杨辉)
通讯作者: Lu, SL(陆书龙)
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS
发表日期: 2016
DOI: 10.7567/JJAP.55.022301
卷: 55, 期:2
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Solid-state molecular beam epitaxy (MBE)-grown InGaAsP/InGaAs dual-junction solar cells on InP substrates are reported. An efficiency of 10.6% under 1-sun AM1.5 global light intensity is realized for the dual-junction solar cell, while the efficiencies of 16.4 and 12.3% are reached for the top InGaAsP and bottom InGaAs cells, respectively. The effects of the buffer layer and back-surface field on the performance of solar cells are discussed. High device performance is achieved in the case of a low concentration of oxygen and weak recombination when InGaAs buffers and InP back-surface field layers are used, respectively. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]: MOLECULAR-BEAM-EPITAXY ; BAND OFFSETS ; EFFICIENCY ; OXYGEN ; HETEROSTRUCTURE ; JUNCTION ; INALAS ; GAAS ; INP
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000369005300015
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4631
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Wu, YY,Ji, L,Dai, P,et al. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(2).
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