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题名: Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer
作者: Wu, GJ; Wang, XD; Wang, P; Huang, H; Chen, Y; Sun, S; Shen, H; Lin, T; Wang, JL; Zhang, ST; Bian, LF(边历峰); Sun, JL; Meng, XJ; Chu, JH
通讯作者: Wang, JL
刊名: NANOTECHNOLOGY
发表日期: 2016
DOI: 10.1088/0957-4484/27/36/364002
卷: 27, 期:36
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 mu s). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.
关键词[WOS]: FIELD-EFFECT TRANSISTORS ; GRAPHENE PHOTODETECTOR ; MONOLAYER GRAPHENE ; ROOM-TEMPERATURE ; ELECTRIC-FIELD ; MOS2 ; FILMS ; HETEROSTRUCTURES ; PHOTOTRANSISTORS ; PHOTORESPONSE
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000384064400003
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4637
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Wu, GJ,Wang, XD,Wang, P,et al. Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer[J]. NANOTECHNOLOGY,2016,27(36).
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文件名: Wu-2016-Visible to short wavelength infrared I.pdf
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