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题名: Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers
作者: Weng, GE; Mei, Y; Liu, JP(刘建平); Hofmann, W; Ying, LY; Zhang, JY; Bu, YK; Li, ZC; Yang, H(杨辉); Zhang, BP
通讯作者: Zhang, BP
刊名: OPTICS EXPRESS
发表日期: 2016
DOI: 10.1364/OE.24.015546
卷: 24, 期:14
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Low threshold continuous-wave (CW) lasing of current injected InGaN quantum dot (QD) vertical-cavity surface-emitting lasers (VCSELs) was achieved at room temperature. The VCSEL was fabricated by metal bonding technique on a copper substrate to improve the heat dissipation ability of the device. For the first time, lasing was obtained at yellow-green wavelength of 560.4 nm with a low threshold of 0.61 mA, corresponding to a current density of 0.78 kA/cm(2). A high degree of polarization of 94% were measured. Despite the operation in the range of "green gap" of GaN-based devices, single longitudinal mode laser emission was clearly achieved due to the high quality of active region based on InGaN QDs and the excellent thermal design of the VCSELs. (C)2016 Optical Society of America
关键词[WOS]: QUANTUM DOTS ; DIODES ; FIELDS
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000381770500050
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4640
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Weng, GE,Mei, Y,Liu, JP,et al. Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers[J]. OPTICS EXPRESS,2016,24(14).
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文件名: Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers.pdf
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