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题名: Catastrophic Degradation of InGaN/GaN Blue Laser Diodes
作者: Wen, Pengyan(温鹏雁); Zhang, Shuming(张书明); Liu, Jianping(刘建平); Li, Deyao(李德尧); Zhang, Liqun(张立群); Zhou, Kun; Su, Xujun(苏旭军); Tian, Aiqin(田爱琴); Zhang, Feng(张丰); Yang, Hui(杨辉)
通讯作者: Zhang, Shuming(张书明)
关键词: Catastrophic degradation ; InGaN/GaN laser diodes (LDs) ; transmission electron microscopy (TEM)
刊名: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
发表日期: 2016
DOI: 10.1109/TDMR.2016.2617885
卷: 16, 期:4, 页:638-641
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: A study of catastrophic degradation of InGaN/GaN laser diodes (LDs) is presented. Local damage on the aged LD is identified with the reduction of the electron beam induced current intensity. A pipe-shaped defect is observed in the particular damaged region by using the transmission electron microscopy (TEM) and scanning TEM technique. Diffusion of the contact metal along the defect is enhanced by the local electric field and high temperature. Catastrophic degradation of the LD occurs due to burning of the local region.
关键词[WOS]: GAN
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000389852400032
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4642
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Wen, Pengyan,Zhang, Shuming,Liu, Jianping,et al. Catastrophic Degradation of InGaN/GaN Blue Laser Diodes[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,2016,16(4):638-641.
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文件名: Catastrophic Degradation of InGaN_GaN Blue Laser Diodes .pdf
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