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题名: Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging
作者: Wang, ZJ; Dong, JC; Cui, Y(崔义); Eres, G; Timpe, O; Fu, Q; Ding, F; Schloegl, R; Willinger, MG
通讯作者: Willinger, MG
刊名: NATURE COMMUNICATIONS
发表日期: 2016
DOI: 10.1038/ncomms13256
卷: 7
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 大科学装置
英文摘要: In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene-graphene and graphene-substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp(2) carbon nanostructures in between graphene and graphite.
关键词[WOS]: CHEMICAL-VAPOR-DEPOSITION ; NI ALLOY FOILS ; BILAYER GRAPHENE ; EPITAXIAL GRAPHENE ; GROWTH ; EDGE ; CU ; GRAPHITE ; KINETICS ; ENERGY
语种: 英语
JCR小类分区: 一区
WOS记录号: WOS:000385618100002
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4651
Appears in Collections:大科学装置_期刊论文

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Recommended Citation:
Wang, ZJ,Dong, JC,Cui, Y,et al. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging[J]. NATURE COMMUNICATIONS,2016,7.
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文件名: Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging.pdf
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