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题名: Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate
作者: Wang, K; Xing, YH; Han, J; Zhao, KK; Guo, LJ; Zhang, YL; Deng, XG(邓旭光); Fan, YM(范亚明); Zhang, BS(张宝顺)
通讯作者: Xing, YH
刊名: JOURNAL OF ALLOYS AND COMPOUNDS
发表日期: 2016
DOI: 10.1016/j.jallcom.2016.02.002
卷: 671
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
英文摘要: GaN epilayers have been grown on Si(111) substrates with various high temperature AlN buffer layers by metal-organic chemical vapor deposition (MOCVD). It is found that, the surface morphology and structural and optical properties of the GaN epilayer strongly depends on the TMAl source flow rate. The properties of GaN films were characterized by X-ray diffraction, atomic force microscopy, Raman, photoluminescence and cathodoluminescence measurements. With the optimized TMAl source flow rate, we were able to obtain a 1-mu m-thick crack-free GaN layer. The (0002) and (10 (1) over bar2) XRD FWHM of the GaN film are 547 and 563 arcsec respectively, the tensile stress calculated from the Raman spectra is 0.4 GPa, and RMS roughness of AFM 5 mu m x 5 mu m scan is 0.539 nm. (C) 2016 Published by Elsevier B.V.
关键词[WOS]: LIGHT-EMITTING-DIODES ; STRESS ; EVOLUTION ; MOCVD ; FILMS ; LAYER
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000371767900057
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4675
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Wang, K,Xing, YH,Han, J,et al. Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,671.
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