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题名: Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system
作者: Wan, L; Li, X; Zhu, N; Zhang, RY(张瑞英); Mei, T
通讯作者: Mei, T
刊名: MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
发表日期: 2016
DOI: 10.1007/s00542-015-2603-7
卷: 22, 期:8
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: In order to directly characterize sidewall roughnesses of shallow microstructures with etching depth less than 10 mu m using a conventional atomic force microscope tip, an easy bevel-cut sample technique was developed. With help of the proposed measurement technique, the sidewall verticalities and roughnesses between trench and ridge profiles were compared and optimized using an L9 orthogonal array experiment based on a simple continuous dry-etching process. Additionally, due to the influence of loading effect, the contribution proportions of four control factors on etching quality characteristics were evaluated. As some improved measurement results, optimized root mean square sidewall roughnesses of 3.61 and 4.7 nm were obtained for ridge and trench structures, respectively, with depth greater than 4 mu m and the sidewall verticality of 90 +/- 1 degrees.
关键词[WOS]: RIB WAVE-GUIDES ; FABRICATION ; ROUGHNESS
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000380121700023
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4692
Appears in Collections:纳米器件及相关材料研究部_董建荣团队_期刊论文

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Recommended Citation:
Wan, L,Li, X,Zhu, N,et al. Optimization for etching shallow ridge and trench profiles on silicon based on continuous etching process in ICPRIE system[J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS,2016,22(8).
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