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题名: Photoconductive probing of the trap distribution in switchable interfaces
作者: Tian, Y; Zhang, JM; Guo, CF; Zhang, BS(张宝顺); Liu, Q
通讯作者: Zhang, BS(张宝顺)
刊名: NANOSCALE
发表日期: 2016
DOI: 10.1039/c5nr06231d
卷: 8, 期:2
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
英文摘要: Interfacial resistive switching features are highly dependent on the distribution of the carrier traps in the interface. However, the lack of probing seriously restricts ways of offering physical insights into its mechanism and improving interfacial resistors. In this work, we investigated a resistive switching interface that consists of Bi2S3 nano networks (BSNN) and F-doped SnO2 (FTO), uncovering the relationship between the decay of the photoconductance in BSNN and interfacial trap distribution. Based on this, we suggest a general method to probe the distribution of various interface traps. This method provides us with a new tool to study the interfacial trap distribution in an interfacial resistor, and it might also be used to understand other interface problems.
关键词[WOS]: PHOTODETECTORS ; NANOWIRES ; FILMS
语种: 英语
JCR小类分区: 一区
WOS记录号: WOS:000367258500027
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4698
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Tian, Y,Zhang, JM,Guo, CF,et al. Photoconductive probing of the trap distribution in switchable interfaces[J]. NANOSCALE,2016,8(2).
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文件名: Tian-2016-Photoconductive probing of the trap.pdf
格式: Adobe PDF
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