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题名: Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
作者: Sun, Y(孙逸); Zhou, K; Sun, Q(孙钱); Liu, JP(刘建平); Feng, MX(冯美鑫); Li, ZC(李增成); Zhou, Y(周宇); Zhang, LQ(张立群); Li, DY(李德尧); Zhang, SM(张书明); Ikeda, M; Liu, S; Yang, H(杨辉)
通讯作者: Sun, Q(孙钱)
刊名: NATURE PHOTONICS
发表日期: 2016
卷: 10, 期:9
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are electrically driven at room temperature(1,2). To fully utilize the benefits of large-scale, low-cost manufacturing foundries, it is highly desirable to grow direct bandgap III-V semiconductor lasers directly on Si3-5. Here, we report the demonstration of a blue-violet (413 nm) InGaN-based laser diode grown directly on Si that operates under continuous-wave current injection at room temperature, with a threshold current density of 4.7 kA cm(-2). The heteroepitaxial growth of GaN on Si is confronted with a large mismatch in both the lattice constant and the coefficient of thermal expansion, often resulting in a high density of defects and even microcrack networks. By inserting an Al-composition step-graded AIN/AIGaN multilayer buffer between the Si and GaN, we have not only successfully eliminated crack formation, but also effectively reduced the dislocation density. The result is the realization of a blue-violet InGaN-based laser on Si.
关键词[WOS]: X-RAY-DIFFRACTION ; EPITAXIAL LAYERS ; GAN ; SILICON ; DIODES ; DEGRADATION ; RELAXATION ; OPERATION ; LIGHT
语种: 英语
JCR小类分区: 一区
WOS记录号: WOS:000382800500013
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4710
Appears in Collections:纳米器件及相关材料研究部_孙钱团队_期刊论文

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Recommended Citation:
Sun, Y,Zhou, K,Sun, Q,et al. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si[J]. NATURE PHOTONICS,2016,10(9).
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