中国科学院苏州纳米技术与纳米仿生研究所机构知识库
Advanced  
SINANO OpenIR  > 纳米加工公共平台  > 期刊论文
题名: AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation
作者: Sun, SC; Fu, K(付凯); Yu, GH(于国浩); Zhang, ZL; Song, L; Deng, XG; Qi, ZQ; Li, SM; Sun, Q(孙钱); Cai, Y(蔡勇); Dai, JN; Chen, CQ; Zhang, BS(张宝顺)
通讯作者: Chen, CQ ; Fu, K(付凯)
刊名: APPLIED PHYSICS LETTERS
发表日期: 2016
DOI: 10.1063/1.4939508
卷: 108, 期:1
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
英文摘要: This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal-organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 x 10(14) cm(-2)) and 90 keV (dose: 1 x 10(14) cm(-2)), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I-DSmax at a gate voltage of 3V was 701 mA/mm and the maximum transconductance gmmax was 83 mS/mm. (C) 2016 AIP Publishing LLC.
关键词[WOS]: FIELD-EFFECT TRANSISTORS ; MOLECULAR-BEAM EPITAXY ; BUFFER LAYER ; DOPED GAN ; POLARIZATION ; HETEROSTRUCTURES ; SAPPHIRE ; STATES ; INP
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000374313000066
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4711
Appears in Collections:纳米加工公共平台_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
AlGaN_GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation.pdf(869KB)----限制开放View 联系获取全文

Recommended Citation:
Sun, SC,Fu, K,Yu, GH,et al. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation[J]. APPLIED PHYSICS LETTERS,2016,108(1).
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Sun, SC]'s Articles
[Fu, K(付凯)]'s Articles
[Yu, GH(于国浩)]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Sun, SC]‘s Articles
[Fu, K(付凯)]‘s Articles
[Yu, GH(于国浩)]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: AlGaN_GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!